| 摘要 |
A memory device capable of rewriting data with smaller current consumption than a case of feeding a rewrite current every bit line is obtained. This memory device comprises a first bit line and a second bit line having a current path independently of the first bit line, and renders write current paths of the first and second bit lines in common. Thus, the memory device can rewrite data with smaller current consumption as compared with the case of feeding the rewrite current every bit line.
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