| 摘要 |
<p>An epitaxial growth method comprising a step for forming a first compound semiconductor layer composed of elements A, B and C or A, B, C and D on a semiconductor substrate held by a substrate support by organo-metallic CVD system, and a heterojunction forming step for forming a second compound semiconductor layer composed of elements A and D, wherein a semiconductor wafer having a warp not larger than 20 μm on the rear side is employed as the semiconductor substrate and the air gap between the rear surface of the semiconductor substrate and the substrate support is minimized, or preferably eliminated, in order to suppress the flowing of material gas around to the rear side of the substrate.</p> |
