SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device including multilayer wiring and having good smoothness of its interlayer insulation film and its manufacturing method.

SOLUTION: The manufacturing method includes processes of forming a multilayer interlayer insulation films composed of an insulation film and an SOG film on and beside underlayer wiring of the semiconductor device which has multilayer wiring structure and etching the films back until the difference in level of the underlayer wiring is reduced to form a smooth surface. In this method, the processes of making the insulation film and the SOG film on and beside the underlayer wiring and etching the SOG film until the insulation film on the wiring is exposed are repeated at least twice.

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