| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a composition for polishing for CMP machining that has superior selectivity, where the polishing speed of a tantalum compound is small, even though that of copper is large in the CMP machining process of a semiconductor device having a copper film and the tantalum compound, and also has smoothness in the surface of the copper film. <P>SOLUTION: The composition for polishing comprises a polishing material (A), quinoxalinecarboxylic acid and/or quinazoline carboxylic acid (B), an organic acid (C), hydrogen peroxide (D), and water (D). In this case, the polishing material is a composition, made of an organic polymer compound having an average particle size of 5 to 100 nm, and the concentration of the composition for polishing the polishing material is set to 1 to 30 wt.%. <P>COPYRIGHT: (C)2003,JPO</p> |
