| 发明名称 |
COMPOSITION FOR POLISHING FOR SELECTIVELY POLISHING SILICON USED IN MANUFACTURE OF SEMICONDUCTOR DEVICE |
| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a composition for polishing that can selectively polish silicon. <P>SOLUTION: The composition for polishing is to contain a silicon dioxide abrasive coating, water, and tetramethyl ammonium hydroxide. <P>COPYRIGHT: (C)2003,JPO</p> |
| 申请公布号 |
JP2003218069(A) |
申请公布日期 |
2003.07.31 |
| 申请号 |
JP20020013833 |
申请日期 |
2002.01.23 |
| 申请人 |
FUJIMI INC |
发明人 |
ASANO HIROSHI;HORI TETSUJI |
| 分类号 |
B24B57/02;B24B37/00;C09K3/14;H01L21/304;(IPC1-7):H01L21/304 |
主分类号 |
B24B57/02 |
| 代理机构 |
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| 主权项 |
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| 地址 |
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