| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a sense amplifier driver circuit of a semiconductor memory device which enables to increase a sensing speed of a sense amplifier, by preventing the decrease in sensing speed with changes in manufacturing processes, operating voltage, and temperatures. <P>SOLUTION: The sense amplifier driver circuit comprises a plurality of series- connected delay inverters, with at least one of the delay inverters connected to the output in series; and a plurality of NMOS transistors with the gates being connected to the common input, with an overall beta ratio (width to length ratio) of the NMOS transistors being the same as a beta ratio of a pass transistor of a bit cell. The aggregate length of the NMOS transistors is the same as a length of the pass transistor of the bit cell, and widths of the NMOS transistors are different from a width of the pass transistor of the bit cell. <P>COPYRIGHT: (C)2003,JPO |
