MAGNETORESISTIVE EFFECT ELEMENT, ITS MANUFACTURING METHOD, AND MAGNETIC MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To suppress the resistance fluctuation between tunnel magnetoresistive effect type storage elements to a low level while a large TMR ratio is obtained. SOLUTION: A tunnel magnetoresistive effect element has a multilayered film structure including two ferromagnetic layers 11 and 12 and a barrier layer 13 sandwiched between the layers 11 and 13. At the time of constituting the element, the barrier layer 13 is formed by forming a conductive layer 16 containing a metallic material as the main component and an added material of a different kind of element on one ferromagnetic layer 11 after the layer 11 is formed and oxidizing the conductive layer 16. Thereafter, the other ferromagnetic layer 12 is formed on the barrier layer 13. COPYRIGHT: (C)2003,JPO