SEMICONDUCTOR THIN FILM, THIN FILM SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THEM

摘要

PROBLEM TO BE SOLVED: To solve the problem that it is remarkably difficult to form a single crystal silicon film on an inexpensive flexible substrate which is mainly formed of a metal and to form a thin film semiconductor device with less dispersion in characteristic, reliability and elements. SOLUTION: The single crystal silicon film is formed on a translucent first crystal substrate. A second substrate in which an insulating film is formed on a surface and which is mainly formed of the metal is bonded. Light having the wavelength region of the large light absorption coefficient of single crystal silicon is irradiated from the rear face of the first crystal substrate. The interface of the single crystal silicon film is melted, it is separated from the first substrate and transferred to the second substrate. COPYRIGHT: (C)2003,JPO