Ferroelectric integrated circuit devices having an oxygen penetration path and methods for manufacturing the same

摘要

Ferroelectric integrated circuit devices, such as memory devices, are formed on an integrated circuit substrate. Ferroelectric capacitor(s) are on the integrated circuit substrate and a further structure on the integrated circuit substrate overlies at least a part of the ferroelectric capacitor(s). The further structure includes at least one layer providing a barrier to oxygen flow to the ferroelectric capacitor(s). An oxygen penetration path contacting the ferroelectric capacitor(s) is interposed between the ferroelectric capacitor(s) and the further structure. The layer providing a barrier to oxygen flow may be an encapsulated barrier layer. Methods for forming ferroelectric integrated circuit devices, such as memory devices, are also provided.