TRENCH GATE DMOS FIELD-EFFECT TRANSISTOR AND METHOD OF MAKING THE SAME,申请号KR20027011241-传众专利搜索

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发明名称	TRENCH GATE DMOS FIELD-EFFECT TRANSISTOR AND METHOD OF MAKING THE SAME
摘要
申请公布号	KR20030064270(A)	申请公布日期	2003.07.31
申请号	KR20027011241	申请日期	2002.08.27
申请人		发明人
分类号	H01L29/78;H01L21/336;H01L29/423;H01L29/45;H01L29/49	主分类号	H01L29/78
代理机构		代理人
主权项
地址

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