| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device high in layout efficiency where devices are repeatedly arranged with pitches not to be laid out by dividing the gate by an odd number. <P>SOLUTION: The device comprises a single diffusion layer area presenting a roughly rectangular plan view, a plurality of drain nodes provided along a first rim in the X-pitch direction of the diffusion layer area, a plurality of source nodes provided along a second rim in the same direction of the diffusion layer area, and gate electrodes divided into an odd number to be parallel with the X-pitch direction of the diffusion layer area. Height Yc'2 of the first rim in the direction orthogonal to the X-pitch direction is designed to be shorter than the height Yc'1 of the second rim in the direction orthogonal to the X-pitch direction. <P>COPYRIGHT: (C)2003,JPO |
