| 摘要 |
<P>PROBLEM TO BE SOLVED: To manufacture a semiconductor light emitting element with excellent crystallinity without an increase in the number of processes while suppressing penetration dislocation, etc., from a substrate side, to make a chip microstructural at the same time, to facilitate the formation of an electrode, and to evade the deposition of polycrystal on a mask. <P>SOLUTION: A manufacturing method includes a process of forming a mask having an opening part in a substrate 1, a process of forming a crystal layer with a slanting crystal surface oblique to a main surface from the opening part of the mask by selective growth and forming a 1st conductivity layer 5, an active layer 6, and a 2nd conductivity layer 7 which extend in a plane parallel to the slanting crystal surface on the crystal layer, and a process of removing the mask. <P>COPYRIGHT: (C)2003,JPO |
