发明名称 Method of inhibiting pattern collapse using a relacs material
摘要 A method of inhibiting pattern collapse using relacs (resist enhancement lithography assisted by chemical shrink) is disclosed herein. More particularly, the present invention relates to a method of forming photoresist patterns by coating relacs material on an underlying layer before coating photoresist material thereon and then heating the layer to inhibit pattern collapse.
申请公布号 US2003143489(A1) 申请公布日期 2003.07.31
申请号 US20020319059 申请日期 2002.12.13
申请人 KONG KEUN KYU;LEE SUNG KOO 发明人 KONG KEUN KYU;LEE SUNG KOO
分类号 G03F7/033;G03F7/11;G03F7/38;H01L21/027;H01L21/312;(IPC1-7):G03F7/26 主分类号 G03F7/033
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