发明名称 |
Method of inhibiting pattern collapse using a relacs material |
摘要 |
A method of inhibiting pattern collapse using relacs (resist enhancement lithography assisted by chemical shrink) is disclosed herein. More particularly, the present invention relates to a method of forming photoresist patterns by coating relacs material on an underlying layer before coating photoresist material thereon and then heating the layer to inhibit pattern collapse.
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申请公布号 |
US2003143489(A1) |
申请公布日期 |
2003.07.31 |
申请号 |
US20020319059 |
申请日期 |
2002.12.13 |
申请人 |
KONG KEUN KYU;LEE SUNG KOO |
发明人 |
KONG KEUN KYU;LEE SUNG KOO |
分类号 |
G03F7/033;G03F7/11;G03F7/38;H01L21/027;H01L21/312;(IPC1-7):G03F7/26 |
主分类号 |
G03F7/033 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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