| 摘要 |
<p>The present invention relates to a photovoltaic element and a method of producing the same. More particularly, the invention concerns a photovoltaic element that can be produced at a low manufacturing cost and that demonstrates a high photoelectric conversion efficiency and little photo-deterioration, and a method of producing the same. The photovoltaic element has inter alia a first pin junction which comprises microcrystal silicon carbide (microcrystal SiC) as a principal component of the i-type semiconductor layer, and a second pin junction which comprises microcrystal silicon (microcrystal Si) as a principal component of the i-type semiconductor layer. The average grain diameter and/or the volume percentage of the microcrystal semiconductor which forms the i-type semiconductor layer are varied with change in a compositional ratio of carbon in the i-type semiconductor layer comprising microcrystal SiC. <IMAGE></p> |
