STACK CAPACITOR AND METHOD OF FABRICATING THE SAME

摘要

PURPOSE: A stack capacitor and method of fabricating the same are provided to prevent toppling or bridge of a storage node, and to achieve a fine and integrated stack type capacitor. CONSTITUTION: An insulation layer(310) having a contact(315) and a contact pad(320) is formed. The first etch stop layer(330), the first insulation layer, the second etch stop layer(340) and the second insulation layer are formed on the insulation layer. An opening for a storage node is formed to expose the contact pad by etching their layers. The third insulation layer is formed on the first conductive layer. The first conductive layer and the third insulation layer are etched to expose the second insulation layer. The third insulation layer and the second insulation layer exposed are removed to form a storage node(361). A dielectric layer(370) and a plate node(375) are formed on the substrate.