| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a group III-V solar battery composed principally of GaAs with superior radiation resistance and a GaAs-based group III-V multijunction type solar battery with superior radiation resistance. <P>SOLUTION: The group III-V solar battery is a group III-V solar battery comprising an n-type emitter layer and a p-type base layer and characterized in that the optical band gap of a material constituting the p-type base layer becomes smaller toward a p-n junction. The group III-V solar battery is a multijunction type solar battery constituted by stacking a plurality of solar batteries having different optical band gaps and characterized in that the group III-V solar batteries comprising n-type emitter layers and p-type base layers principally composed of GaAs are stacked and the optical band gaps of the p-type base layers become smaller toward the p-n junction. <P>COPYRIGHT: (C)2003,JPO</p> |
