| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a flash memory cell and a method of manufacturing the same that enables to improve electric characteristics and to increase a degree of integration of elements while at the same time reducing the number of steps of a process, and also to provide programming, erasing, and reading methods in the flash memory cell. <P>SOLUTION: The flash memory cell comprises a tunnel oxide film formed in a prescribed area of an SOI substrate, floating gate formed on the tunnel oxide film, dielectric film formed on the floating gate, first and second channel regions formed in parts of the SOI substrate below both edges of the floating gate, source region formed between the first and the second channel regions, first and second drain regions formed in parts of the SOI substrates on both sides of an ONO film, and word lines formed on the dielectric film. Electrons are injected into the floating gate in each of the first and the second channel regions or the electrons injected are released by controlling voltages to be applied to the source region, the word lines, and the first and the second drain regions, to make it possible to store data of two bits in a single cell. <P>COPYRIGHT: (C)2003,JPO</p> |
