| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetic detecting element that has a low electrical resistance between an antiferromagnetic layer giving a vertical bias and a free magnetic layer and a strong switching anisotropic magnetic field. SOLUTION: The electrical resistances of second antiferromagnetic layers 13 and 13 in the direction parallel to their surfaces can be reduced by increasing the cross sections of the layers 13 and 13 in the direction perpendicular to their surfaces by making the lengths H1 of the layers 13 and 13 in their height directions (the direction Y in the figure) on both side sections S and S of the track width area C of a free magnetic layer 25 longer than the length M1 of the area C in its height direction. In addition, the switching anisotropic magnetic field also increases, because the joint areas of the antiferromagnetic layers 13 and 13 with the free magnetic layer 25 increase. COPYRIGHT: (C)2003,JPO |
