| 摘要 |
PROBLEM TO BE SOLVED: To make a trench being filled easily with an isolation insulating material by etching in STI process. SOLUTION: The etching method for making a trench 210 isolating an element being formed on a silicon substrate electrically by introducing a processing gas into a gastight processing chamber and subjecting silicon of the silicon substrate to plasma processing comprises a first step for introducing a mixture gas containing at least HBr and N<SB>2</SB>as the processing gas and rounding the upper side part of the sidewall of the trench by plasma processing, a second step for making a trench in the silicon of the silicon substrate by plasma processing, and a third step for introducing a mixture gas containing at least HBr and Cl<SB>2</SB>as the processing gas and rounding the bottom part of the trench by plasma processing. COPYRIGHT: (C)2003,JPO
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