| 摘要 |
PROBLEM TO BE SOLVED: To provide a charged particle beam exposure method of extracting the parameters of an exposure light intensity distribution function optimal for correcting exposure data on a proximity effect so as to form a pattern of high dimensional accuracy, in accordance with exposure data corrected on a proximity effect on the basis of an exposure light intensity distribution function. SOLUTION: Pattern data for extracting parameters are corrected on a proximity effect, a parameter extraction pattern is actually exposed in accordance with the parameter extraction pattern data corrected on a proximity effect, the parameters of an exposure light intensity distribution function are extracted from the exposure result, target exposure data are corrected on a proximity effect by the use of the extracted parameters, and exposure is performed in accordance with the corrected exposure data. COPYRIGHT: (C)2003,JPO
|
