THIN FILMS, STRUCTURES HAVING THIN FILMS, AND METHODS OF FORMING THIN FILMS

摘要

The invention described herein relates to new titanium−comprising materials which can be utilized for forming titanium alloy barrier layers for Cu applications.Titanium alloy sputtering targets can be reactively sputtered in a nitrogen−comprising sputtering gas atmosphere to from titanium alloy nitride film,or alternatively in a nitrogen−comprising and oxygen−comprising atmosphere to form titanium alloy oxygen nitrogen thin film.The thin films formed in accordance with the present invention can contain a non−columnar grain structure,low electrical resistivity,high chemical stability,and barrier layer properties comparable or exceeding those of TaN.