| 摘要 |
An amplification type solid-state image pickup device has a plurality of pixels each of which comprises a photodiode 4, a signal-amplification-use MOS transistor 1 for amplifying signal charges stored in the photodiode 4, a reset-use MOS transistor 2 for resetting signal charges stored in the photodiode 4, and a pixel-selection-use MOS transistor 3 for selecting a signal amplified by the signal-amplification-use MOS transistor 1. During a first period, a reset drain voltage VP(i) is turned and held in a Low state. During second and third periods thereof, the reset drain voltage VP(i) is changed to a High state. A reset gate voltage RS(i) is set to a first voltage (VDD-DELTAV) during the first and second periods, and the reset gate voltage RS(i) is set to a second voltage VDD higher than the first voltage by a specified voltage DELTAV during the third period. |
