| 摘要 |
<p>Apparatus for use in edge etching a plurality of flat semiconductor wafers comprises a carousel releasably holding a plurality of carriers that are adapted to support a horizontal stack of wafers at selected points along the edges of the wafers. The carousel is adapted to be releasably attached to a dual axis rotary drive mechanism in a reaction chamber containing a plasma jet stream generator. The drive mechanism is operated to cause axis rotation of the carriers over the plasma jet stream, with selected edges of the wafers being directly exposed to and etched by the plasma. The etching process is interrupted to permit the carriers to be removed from the carousel for reorientation of the wafers. Thereafter, the etching process is resumed, whereby other edges of the wafers are subjected to etching by the plasma jet stream.</p> |
