发明名称 |
FABRICATION METHOD, VARACTOR, AND INTEGRATED CIRCUIT |
摘要 |
A method in the fabrication of an integrated bipolar circuit for forming a p/n-junction varactor is disclosed. The method featuring the steps of providing a p-doped substrate (10; 10, 41); forming a buried n+-doped region (31) in the substrate; forming in the substrate an n-doped region (41) above the buried n+-doped region (31); forming field isolation (81) around the n-doped region (41); multiple ion implanting the n-doped region (41); forming a p+-doped region (151) on the n-doped region (41); forming an n+-doped contact region to the buried n+-doped region (31), the contact region being separated from the n-doped region (41); and heat treating the hereby obtained structure to set the doping profiles of the doped regions. The multiple ion implantation of the n-doped region (41); the formation of the p+-doped region (151); and the heat treatment are performed to obtain a hyper-abrupt p+/n-junction within the n-doped region (41).
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申请公布号 |
WO03063255(A1) |
申请公布日期 |
2003.07.31 |
申请号 |
WO2003SE00048 |
申请日期 |
2003.01.15 |
申请人 |
TELEFONAKTIEBOLAGET L M ERICSSON;JOHANSSON, TED;NORSTROEM, HANS;SAHL, STEFAN |
发明人 |
JOHANSSON, TED;NORSTROEM, HANS;SAHL, STEFAN |
分类号 |
H01L29/93;(IPC1-7):H01L29/93 |
主分类号 |
H01L29/93 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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