| 摘要 |
PURPOSE: A method for manufacturing a thin film transistor is provided to achieve a good interface property between a polysilicon semiconductor layer and SiO2 insulation layer. CONSTITUTION: In the fabrication of a thin film transistor, an insulation layer is deposited on a semiconductor substrate. The insulation layer is treated by plasma under oxygen, nitrogen, and nitrogen oxide. An insulation layer is deposited on it.
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