| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nonreducing dielectric ceramic material which can be burned at a low temperature of ≤1,300°C, and in which the properties of capacitance can be controlled to a wide range, and which exhibits a high relative dielectric constant, a high insulation resistance and a high Q value, and hardly causes defects in high temperature load testing, so that multilayer ceramic electronic parts having excellent reliability can stably be obtained even when stack bodies are stacked, and are burned. <P>SOLUTION: The nonreducing dielectric ceramic material contains the main components expressed by the general formula of [(CaXSr<SB>1-x</SB>)O]<SB>m</SB>[(Ti<SB>y</SB>Zr<SB>1-y</SB>)O<SB>2</SB>], wherein x, y and m respectively satisfy 0≤x≤1.0, 0≤y≤0.5 and 0.80≤m≤1.10, and, as assistant components to 100 mol% of the main components, Si oxide of 0.5 to 2.5 mol% expressed in terms of SiO, MnO oxide of 0.5 to 3.5 mol% expressed in terms of MnO, and Al oxide of 0.01 to 10 mol% expressed in terms of Al<SB>2</SB>O<SB>3</SB>. <P>COPYRIGHT: (C)2003,JPO |
