| 摘要 |
PROBLEM TO BE SOLVED: To provide an MOCVD (metal-organic chemical vapor deposition) system which deposits a thin film having satisfactory performance by suppressing a temperature drop of a gaseous starting material, and to provide a method for the same. SOLUTION: In the MOCVD system, the gaseous starting material in which an oxidation gas is mixed with an MO gaseous starting material is fed to a substrate 13 for depositing a film. The MOCVD system includes a substrate holder 14 to hold the substrate 13, a film deposition chamber to accommodate the substrate holder, a feeding mechanism to feed the gaseous starting material on a substrate surface, and a heating device to heat the substrate 13 held on the substrate holder. The film deposition chamber has a substrate housing part to house the substrate holder holding the substrate, and a passage housing part which is connected to the substrate housing part and serves as a passage to feed the gaseous starting material to the substrate. The cross section area of the passage when the passage housing part is cut in parallel with the film deposition surface of the substrate 13 is small compared with the area of the film deposition surface of the substrate 13. COPYRIGHT: (C)2003,JPO
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