METHOD OF MANUFACTURING THIN GALLIUM NITRIDE FILM

摘要

PROBLEM TO BE SOLVED: To provide a method easily mass-producing of a thin single phase gallium nitride film which is pure and uniform and practically applied to a gallium nitride light emitting diode as a short-wavelength laser at a low cost.

SOLUTION: The method of manufacturing the thin gallium nitride film includes a process of forming a thin gallium triisopropoxide film by applying a solution containing gallium triisopropoxide to a substrate and a process of bringing the thin gallium triisopropoxide film into a nitriding reaction under a gaseous ammonia atmosphere.

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