| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of growing an SiC or GaN single crystal on a substrate of an electronic device, by which it is possible to realize good crystallinity at temperatures of≤1,200°C. SOLUTION: The method of growing the SiC or GaN single crystal on the substrate of the electronic device by a CVD method has been improved, and the improved method for growing the SiC or GaN single crystal comprises growing the SiC or GaN single crystal at a plurality of growth temperatures (e.g. two growth temperatures of a low temperature of 780 to 950°C and a high temperature of 1,000 to 1,200°C) in a temperature range of≤1,200°C. The SiC single crystal isβ-SiC. As an intermediate layer, the SiC single crystal is grown at a growth temperature of 780 to 950°C until the thickness becomes 50 to 750 nm or the GaN single crystal is grown at a growth temperature of 400 to 600°C until the thickness becomes 50 to 500 nm. COPYRIGHT: (C)2003,JPO
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