Power semiconductor device

摘要

A semiconductor device comprises an active area with a voltage termination structure located adjacent to the active area at an edge portion of the device. The edge portion comprises a substrate region (23, 24) of a first semiconductor type, and the voltage termination structure comprises first and second layers (21 and 22) formed within the substrate region. The first and second layers (21 and 22) define regions each of a second semiconductor type.