| 摘要 |
PROBLEM TO BE SOLVED: To provide a photoluminescence measuring apparatus by which an emission spectrum from a sample at an emission wavelength peak of 1.1μm or less can be observed. SOLUTION: The photoluminescence measuring apparatus comprises a laser light source 1 by which the sample 6 is irradiated with a laser beam oscillated at a wavelength of 960 nm or less, a photodetector 10 which receives light emitted from the sample 6 and the Si filter 8 which is installed on an optical path between the sample 6 and the photodetector 10 and whose thickness is 0.4 mm or less. In a nondestructive evaluation (Fig. A), a laser diode (LD) at an excitation wavelength of 920 to 960 nm and the Si filter whose thickness is 0.1 to 0.4 mm are used in the case of an InP-based DH crystal, and an LD at an excitation wavelength of 960 nm and the Si filter whose thickness is 0.1 to 0.4 mm are used in the case of a GaAs-based DH crystal. When the excitation wavelength is 920 nm or less, the Si filter whose thickness is 0.1 mm can be used. COPYRIGHT: (C)2003,JPO
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