发明名称 METHOD AND APPARATUS FOR GROWING CRYSTAL OF GROUP III NITRIDE
摘要 PROBLEM TO BE SOLVED: To stably grow a crystal of a group III nitride. SOLUTION: When the crystal of the group III nitride 25 constituted of a group III metal and nitrogen is grown from a mixed melt 24, formed from an alkali metal and a group III metal, and a substance containing at least nitrogen in a reaction vessel 12, a part brought into contact with the mixed melt 24 of the reaction vessel 12 is constituted of a dense material. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003212696(A) 申请公布日期 2003.07.30
申请号 JP20020009651 申请日期 2002.01.18
申请人 RICOH CO LTD 发明人 IWATA HIROKAZU;SARAYAMA SHOJI;SHIMADA MASAHIKO;YAMANE HISANORI;ARAKI TAKASHI
分类号 C30B29/38;C30B7/06;(IPC1-7):C30B29/38 主分类号 C30B29/38
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