发明名称 |
BILAYER HDP CVD / PE CVD CAP IN ADVANCED BEOL INTERCONNECT STRUCTURES AND METHOD THEREOF |
摘要 |
An advanced back-end-of-line (BEOL) metallization structure is disclosed. The structure includes a bilayer diffusion barrier or cap, where the first cap layer is formed of a dielectric material preferably deposited by a high density plasma chemical vapor deposition (HDP CVD) process, and the second cap layer is formed of a dielectric material preferably deposited by a plasma-enhanced chemical vapor deposition (PE CVD) process. A method for forming the BEOL metallization structure is also disclosed. The invention is particularly useful in interconnect structures comprising low-k dielectric material for the inter-layer dielectric (ILD) and copper for the conductors. |
申请公布号 |
AU2002346512(A1) |
申请公布日期 |
2003.07.30 |
申请号 |
AU20020346512 |
申请日期 |
2002.11.22 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;INFINEON TECHNOLOGIES NORTH AMERICA CORP |
发明人 |
TERENCE KANE;NAFTALI, E. LUSTIG;ANN MCDONALD;VINCENT MCGAHAY;SOON-CHEON SEO;ANTHONY, K. STAMPER;YUN, YU WANG;ERDEM KALTALIOGLU;TZE-CHIANG CHEN;BRETT, H. ENGEL;JOHN, A. FITZSIMMONS |
分类号 |
H01L21/768;H01L23/522;H01L23/532;(IPC1-7):H01L21/44;H01L29/40;H01L23/48;H01L23/52 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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