发明名称 RESIST COMPOSITION
摘要 <P>PROBLEM TO BE SOLVED: To provide a resist composition which is a chemically amplifying positive resist composition suitable for excimer laser lithography using ArF, KrF or the like and which has excellent solubility even when a resin having a 3-hydroxy-1-adamantyl (meth)acrylate polymer unit or a 3,5-dihydroxy-1- adamantyl (meth)acrylate polymer unit is used. <P>SOLUTION: The resist composition contains a resin having a polymer unit expressed by formula (I) which itself is insoluble or hardly soluble with an alkali aqueous solution but is changed into soluble with an alkali aqueous solution by the action of an acid, a solvent containing at least one kind selected from a group consisting of propylene glycol monomethylether, 2-hydroxy methyl isobutyrate and 3-methoxy-1-butanol, and an acid generator. In formula (I), R<SP>1</SP>represents a hydrogen atom or a methyl group and R<SP>2</SP>represents a hydrogen atom or a hydroxyl group. <P>COPYRIGHT: (C)2003,JPO
申请公布号 JP2003215806(A) 申请公布日期 2003.07.30
申请号 JP20020016611 申请日期 2002.01.25
申请人 SUMITOMO CHEM CO LTD 发明人 TAKADA YOSHIYUKI;MORIUMA HIROSHI;KUWANA KOJI
分类号 G03F7/039;C08F20/28;G03F7/004;G03F7/038 主分类号 G03F7/039
代理机构 代理人
主权项
地址