Method of regulating the voltages on the drain and body terminals of a nonvolatile memory cell during programming and corresponding programming circuit

摘要

The invention relates to a method and a programming circuit for the regulation of voltages on the drain (D) and body (B) terminals of a non-volatile memory cell (3) while being programmed. These voltages are applied through a programming circuit (1) inserted on a conduction pattern that transfers a predetermined voltage value (VPD,Vb) on at least one terminal (D,B) of the memory cell. The method comprises a local regulation phase of said voltage value, within the programming circuit, for deleting the effect of a parasitic resistor (Rpar) lying on the conduction pattern. <IMAGE> <IMAGE>