II-VI and III-V thin film photovoltaic devices

摘要

The photovoltaic device comprises an nCdS / nCdTe heterojunction and a Schottky barrier contact to the CdTe surface, where the CdTe surface portion is converted to p-type conductivity. A thin insulating protective layer may be provided between the Schottky metal contact and the CdTe semiconductor. A multi heterojunction device is also described where the band gap energy of the semiconductor layers decreases from the wide band gap CdS window layer towards the Schottky back contact.