| 摘要 |
Spin valve (SV) and magnetic tunnel junction (MTJ) magnetoresistive sensors are provided having magnetic layers with improved corrosion resistive properties. The SV and MTJ sensors include antiparallel (AP)-pinned layers formed of Co-Fe-X, where X is niobium (Nb), hafnium (Hf) or a mixture niobium and hafnium (NbHf) and laminated free layers formed of Co-Fe-X layers and Ni-Fe-Y layers, where Y is tantalum (Ta) or chromium (Cr). The addition of 5 to 10 atomic wt. % of Nb, Hf or NbHf to Co-Fe and 5 to 10 atomic wt. % Ta or Cr to Ni-Fe improves corrosion resistance by a self-passivation effect of the these metals. Addition of these metals to the magnetic layers reduces grain size of the layers resulting in increased electrical resistance leading to reduced sense current shunting and increased deltaR/R.
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