发明名称 Microlithography reduction objective and projection exposure apparatus
摘要 A microlithography reduction objective formed from six mirrors arranged in a light path between an object plane and an image plane is provided. The microlithography reduction objective is characterized by having an image-side numerical aperture NA>=0.15. In some embodiments, the mirror closest to the image plane, i.e., the fifth mirror is arranged such that an image-side optical free working distance is greater than or equal to a used diameter of a physical mirror surface of the fifth mirror, a physical mirror surface being the area of a mirror where light rays from the object impinge. The fifth mirror may be arranged such that an image-side optical free working distance is greater than or equal to the sum of one-third the used diameter of the physical mirror surface on the fifth mirror and a length between 20 mm and 30 mm. The fifth mirror may be arranged such that the image-side optical free working distance is at least 50 mm, as well. The image-side free working distance is the physical distance between the vertex of the surface of the fifth mirror and the image plane. Other embodiments are described.
申请公布号 US6600552(B2) 申请公布日期 2003.07.29
申请号 US20010004674 申请日期 2001.12.03
申请人 CARL-ZEISS SMT AG 发明人 DINGER UDO
分类号 G02B17/06;G03F7/20;(IPC1-7):G03B27/54;G03B27/72;G02B5/10 主分类号 G02B17/06
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