发明名称 Organometallic precursor for forming metal pattern and method of forming metal pattern using the same
摘要 Disclosed is an organometallic precursor for forming a metal pattern, having a structure defined by the following Formula 1, and a method of forming the metal pattern using the same, in which the conductive metal pattern is readily formed through an exposing step without using a photo-resist.wherein, M is a transition metal selected from the group consisting of Ag, Au, Cu, Pd, Ni, and Pt; L is an imidazolylidene compound having a structure defined by the following Formula 2; and L' is an imidazolylidene compound having a structure defined by the following Formula 2 or a beta-diketonate compound having a structure defined by the following Formula 3:wherein, R1, R2, R3, and R4 are independently a hydrogen atom, or alkyl group, alkenyl group, alkynyl group, carboxyl group, alkoxy group, or ester group with 1 to 20 carbons, or aromatic hydrocarbon group with 6 to 20 carbons; andwherein, R5, R6, and R7 are independently a hydrogen atom, or alkyl group, alkenyl group, alkynyl group, carboxyl group, alkoxy group, or ester group with 1 to 20 carbons, or aromatic hydrocarbon group with 6 to 20 carbons.
申请公布号 US6599587(B2) 申请公布日期 2003.07.29
申请号 US20020238595 申请日期 2002.09.11
申请人 SAMSUNG ELEECTRONICS CO., LTD. 发明人 CHUNG MIN CHUL;HWANG SOON TAIK;BYUN YOUNG HUN;HWANG EUK CHE
分类号 G03F7/004;C07C49/92;C07D233/04;C07F1/00;C07F1/08;C07F1/10;C07F15/00;C07F15/04;H01L21/027;H01L21/288;H05K3/10;(IPC1-7):B05D3/06 主分类号 G03F7/004
代理机构 代理人
主权项
地址