发明名称 Method for inspecting electrical properties of a wafer and apparatus therefor
摘要 A method and apparatus for inspecting electrical properties of wafers, includes a probe station in which a probe card and a performance board are installed. Electric signals are transferred to and from a wafer through the probe card and the performance board, which include information members that identify the types of wafers that can be inspected therewith. When it is verified that the probe card and the performance board are respectively usable to inspect the wafer, input inspection information corresponding to the inspection is read by the probe card and the performance board, which are then set to installation conditions for inspection. After placing the wafer on a chuck of the probe station, and then transferring electric signals to and from the wafer through the probe card and the performance board, the electrical properties of the wafer are analyzed based on the electric signals.
申请公布号 US6600329(B2) 申请公布日期 2003.07.29
申请号 US20010967959 申请日期 2001.10.02
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE JONG-HOON
分类号 G01R31/28;H01L21/66;(IPC1-7):G01R31/02 主分类号 G01R31/28
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