发明名称 |
Heterojunction bipolar transistor |
摘要 |
A bipolar transistor is provided which is of high reliability and high gain, and which is particularly suitable to high speed operation. The bipolar transistor operates with high accuracy and with no substantial change of collector current even upon change of collector voltage. It also has less variation than conventional bipolar transistors for the collector current while ensuring high speed properties and high gain. In one example, the band gap in the base region is smaller than the band gap in the emitter and collector regions. The band gap is constant near the junction with the emitter region and decreases toward the junction with the collector region. A single crystal silicon/germanium is a typically used for the base region.
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申请公布号 |
US6600178(B1) |
申请公布日期 |
2003.07.29 |
申请号 |
US20000599741 |
申请日期 |
2000.06.23 |
申请人 |
HITACHI, LTD.;HITACHI DEVICEENGINEERING CO., LTD. |
发明人 |
WASHIO KATSUYOSHI;HAYAMI REIKO;SHIMAMOTO HIROMI;KONDO MASAO;ODA KATSUYA;OUE EIJI;TANABE MASAMICHI |
分类号 |
H01L29/72;G02B6/42;H01L21/331;H01L29/737;H03F3/45;(IPC1-7):H01L29/737;H01L29/161 |
主分类号 |
H01L29/72 |
代理机构 |
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代理人 |
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