发明名称 |
Substrate independent distributed bragg reflector and formation method |
摘要 |
Distributed Bragg reflectors may be formed in fewer layers by the method, which is capable of producing greater differences in indexes of refraction. Group III-V alternating layers are deposited. The microstructure of alternating layers is controlled to be different. A combination of alternating polycrystalline layers or amorphous and polycrystalline layers results. Alternate ones of the layers oxidize more quickly than the others. A lateral wet oxidation of the alternate ones of the layers produces a structure with large differences in indexes of refraction between adjacent layers. The microstructure between alternating layers may be controlled by controlling Group V overpressure alone or in combination with growth temperature.
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申请公布号 |
US6599564(B1) |
申请公布日期 |
2003.07.29 |
申请号 |
US20000635815 |
申请日期 |
2000.08.09 |
申请人 |
THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS |
发明人 |
HSIEH KUANG-CHIEN;CHENG KEH-YUNG |
分类号 |
H01S5/125;(IPC1-7):B05D5/12;B05D3/10;B05D3/02;B05D1/36 |
主分类号 |
H01S5/125 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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