发明名称 |
Laser-irradiation method and laser-irradiation device |
摘要 |
A laser-irradiation method which comprises a process for fabricating a semiconductor device, comprising: a first step of forming a thin film amorphous semiconductor on a substrate having an insulating surface; a second step of modifying the thin film amorphous semiconductor into a crystalline thin film semiconductor by irradiating a pulse-type linear light and/or by applying a heat treatment; a third step of implanting an impurity element which imparts a one conductive type to the crystalline thin film semiconductor; and a fourth step of activating the impurity element by irradiating a pulse-type linear light and/or by applying a heat treatment; wherein the peak value, the peak width at half height, and the threshold width of the laser energy in the second and the fourth steps above are each distributed within a range of approximately ±3% of the standard value. Also claimed is a laser irradiation device which realizes the method above.
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申请公布号 |
US6599790(B1) |
申请公布日期 |
2003.07.29 |
申请号 |
US19970799202 |
申请日期 |
1997.02.13 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD |
发明人 |
YAMAZAKI SHUNPEI;TERAMOTO SATOSHI;KUSUMOTO NAOTO;FUKUNAGA TAKESHI;NAKAJIMA SETSUO;MIYAMOTO TADAYOSHI;YOSHINOUCHI ATSUSHI |
分类号 |
G10L17/00;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/786;H04M3/22;H04M3/38;H04Q3/00;(IPC1-7):H01L21/00 |
主分类号 |
G10L17/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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