摘要 |
A method for reducing microsteps on an epitaxial layer deposited on a polished semiconductor wafer substrate by post-epitaxial thermal oxidation. The method produces very smooth semiconductor wafers by performing the steps of depositing an epitaxial layer on a wafer substrate, oxidizing a top portion of the expitaxial layer, and removing the oxidized top portion. As a result, the wafer's surface presents little or no microsteps thereon.
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