发明名称 |
Epitaxial semiconductor wafer manufacturing method |
摘要 |
To minimize and stably suppress worsening of a warpage of a wafer in epitaxial treatment. A semiconductor wafer is flattened by a double-sided grinding machine. Machining strains produced at both sides of the semiconductor wafer are removed to measure a direction of the warpage of the semiconductor wafer. The direction of the warpage is adjusted and then, epitaxial treatment is performed.
|
申请公布号 |
US6599760(B2) |
申请公布日期 |
2003.07.29 |
申请号 |
US20020062564 |
申请日期 |
2002.02.05 |
申请人 |
SUMITOMO MITSUBISHI SILICON CORPORATION |
发明人 |
WATANABE TORU |
分类号 |
H01L21/205;H01L21/304;H01L21/66;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/205 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|