Method of fabricating conductive straps to interconnect contacts to corresponding digit lines by employing an angled sidewall implant and semiconductor devices fabricated thereby

摘要

A method for interconnecting bit contacts and digit lines of a semiconductor device. A mask, through which portions of sidewall spacers of the digit lines located proximate the bit contacts are exposed, is positioned over the digit lines. Dopant is directed toward the semiconductor device at a nonperpendicular angle to a plane of the semiconductor device so as to dope portions of the sidewall spacers on one side of each of the digit lines while sidewall spacers opposed thereto and adjacent bit contacts are shielded from the dopant. Doped regions of the sidewall spacers may be removed with selectivity over undoped regions thereof to expose connect regions of each conductive element of each digit line. A conductive strap may then be formed to electrically link each connect region to its corresponding bit contact. Semiconductor devices including the conductive straps are also disclosed.