| 摘要 |
A solid-state pickup element achieves both improvement in sensitivity and reduction of pixel size and a method thereof, includes a first conductive type semiconductor area, which is formed at least so as to include the inside of the semiconductor substrate upward of the overflow barrier area inside the semiconductor substrate, and a charge accumulating area at the position corresponding to the first conductive type semiconductor area of the light receptive sensor part in the epitaxial layer on the semiconductor substrate. An overflow barrier area is formed in the semiconductor substrate, and the first conductive type semiconductor area is formed on the surface, respectively, wherein an epitaxial layer is formed on the semiconductor substrate, and a charge accumulating area is formed at the position corresponding to the first conductive type semiconductor area on the surface side of the epitaxial layer, thereby producing a solid-state pickup element.
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