发明名称 |
MANUFACTURING METHOD FOR SILICON SUBSTRATE |
摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for a silicon substrate capable of manufacturing a large-diameter silicon thin substrate from an ingot by a slicing method using a saw wire at high product yield without any cutting trouble. SOLUTION: This manufacturing method for the silicon substrate produces the silicon substrate by simultaneously and parallel cutting a plurality of positions of silicon ingot 1 bonded to a fixing plate 2 with adhesives 3, by the saw wire 5 and abrasive grains 14. The fixing plate used has a transverse intensity of 50 N/mm<SP>2</SP>and the adhesives having an adhesive strength of 2500 N/cm<SP>2</SP>or more is formed into a layer thickness of the wire diameter or less of the saw wire. COPYRIGHT: (C)2003,JPO |
申请公布号 |
JP2003211349(A) |
申请公布日期 |
2003.07.29 |
申请号 |
JP20020005949 |
申请日期 |
2002.01.15 |
申请人 |
JFE STEEL KK;KAWATETSU TECHNO RES CORP |
发明人 |
SAKAGUCHI YASUHIKO;MINE KIMIO |
分类号 |
B24B27/06;B28D5/04;(IPC1-7):B24B27/06 |
主分类号 |
B24B27/06 |
代理机构 |
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代理人 |
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地址 |
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