Method and apparatus for compensating for ionizing radiation induced threshold shift in metal oxide semiconductor field effect transistors

摘要

A compensation circuit and method for compensating for the threshold shift in an irradiated MOSFET. The method determines the gate threshold voltage to body voltage relationship to vary the body voltage with radiation. The compensation circuit (10) has at least one MOSFET (Q2) having the same channel type as the MOSFET being compensated (Q1). The at least one matching MOSFET (Q2) is connected to the gate of the MOSFET (Q1) being compensated. At least one MOSFET (Q3, Q4) having a channel type that is different from the channel type of the MOSFET (Q1) being compensated is connected to the gate of the matching MOSFET (Q2). The result is that the compensation circuit (10) controls a negative shift in the body voltage of the MOSFET (Q1) being compensated resulting in a higher threshold voltage.