| 摘要 |
A method is designed to manufacture a silicon epitaxial wafer exhibiting sufficient gettering capability from the initial stage of the device process. Specifically, the method is to manufacture the silicon wafer with a nitrogen concentration of at least 1x1012 atoms/cm3 and an oxygen concentration of 10~18x1017 atoms/cm3 by annealing at a temperature of 800~1,100° C. after epitaxial growth treatment, satisfying the following equation (a),wherein T(° C.) is temperature, and t(hr) is time, thereby manufacturing a high yield semiconductor device.
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